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    188宝金博页面版: A microbeam analysis study of some heterojunctions formed with CuInTe2

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    内容提示： Solar Energy Materials 19 (1989) 141-155 141 North-Holland, Amsterdam A MICROBEAM ANALYSIS STUDY OF SOME HETEROJUNCTIONS FORMED WITH CuInTe z A.G. FITZGERALD and S.M. POTROUS Department of Applied Physics and Electronic & Manufacturing Engineering. The University, Dundee DD1 4HN, Scotland, UK Received 14 April 1989 Heterojunctions formed with CulnTe 2 have been examined by a range of microbeam analytical techniques. The junctions studied were n-CdS/p-CuInTe 2 and n-Si/p-CuInTe 2. The p-Si/n-CdS heterojunct...

    文档格式：PDF | 页数：15 | 浏览次数：10 | 上传日期：2020-06-22 16:52:00 | 文档星级：
    Solar Energy Materials 19 (1989) 141-155 141 North-Holland, Amsterdam A MICROBEAM ANALYSIS STUDY OF SOME HETEROJUNCTIONS FORMED WITH CuInTe z A.G. FITZGERALD and S.M. POTROUS Department of Applied Physics and Electronic & Manufacturing Engineering. The University, Dundee DD1 4HN, Scotland, UK Received 14 April 1989 Heterojunctions formed with CulnTe 2 have been examined by a range of microbeam analytical techniques. The junctions studied were n-CdS/p-CuInTe 2 and n-Si/p-CuInTe 2. The p-Si/n-CdS heterojunction has also been studied. Microstructural studies of thin films of CuInTe 2 in a scanning transmission electron microscope under the conditions prevailing during heterojunction formation have been made. X-ray microanalysis depth profile studies have been used to determine the degree of cross-diffusion at the heterojunctions. Electron beam induced conductivity (EBIC) in the scanning electron microscope has been used to measure minority carrier diffusion lengths in each heterojunction. 1. Introduction Copper indium telluride (CuInTe2) is a member of a family of I-III-VI 2 ternary semiconductors with the chalcopyrite structure. The lattice constants for the CuInTe 2 tetragonal chalcopyrite structure have been reported as a = 6.195 ,~, c = 12.39 with c/a = 2.0 [1]. These materials are generally regarded as cross-substitutional derivatives of II-VI binary compounds. Copper indium telluride was first synthe- sised by Hahn et al. in 1953 [2] and a number of investigations have been made of the optical, electrical and physical properties of this material [3-6]. These materials can be produced in either n-type or p-type form. This leads to a variety of potential heterojunction applications. An earlier microbeam analytical study of n- and p-type copper indium telluride films involving transmission electron microscopy (TEM) and Auger electron spec- troscopy (AES) has shown that the substrate temperature has a strong influence on the composition, structure, microstructure and orientation of these films [7]. In the present paper the structure, microstructure, composition and electrical characteris- tics of the CdS/CuInTe 2 and Si/CuInTe 2 heterojunctions have been investigated by microbeam analytical techniques. The structure, microstructure and composition of CuInTe 2 films fabricated under similar conditions to those existing during heterojunction formation have also been investigated. To complete this study p-Si/n-CdS heterojunctions have also been investigated. These heterojunctions have been prepared recently by serigraphy [8] and conversion efficiencies of 8.1% have been recorded. 0165-1633/89/$03.50 © Elsevier Science Publishers B.V. (North-Holland Physics Publishing Division)

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