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    188宝金博页面版: Cu(1y)AgyInS2(1x)Se2x as a prototype of the pentanary chalcopyrite semiconductor system for solar photovoltaic cells

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    内容提示： Solar Energy Materials 1 (1979) 451-469 (~) North-Holland Publishing Company Cu(l_y)AgylnS2(t_xiSe2x AS A PROTOTYPE OF THE PENTENARY CHALCOPYRITE SEMICONDUCTOR SYSTEM FOR SOLAR PHOTOVOLTAIC CELLS* G. H. CHAPMAN, J. SHEWCHUN, B. K. GARSIDE Department of Engineering Physics, McMaster University, Hamilton, Ontario, Canada LSS 4M1 J. J. LOFERSKI and R. BEAULIEU Division of Engineering, Brown University, Providence, RI, USA Received 9 April 1979 Group III-V mixed alloy quarternary semiconductors, such as Ga~l_r...

    文档格式：PDF | 页数：19 | 浏览次数：10 | 上传日期：2020-06-22 16:51:05 | 文档星级：
    Solar Energy Materials 1 (1979) 451-469 (~) North-Holland Publishing Company Cu(l_y)AgylnS2(t_xiSe2x AS A PROTOTYPE OF THE PENTENARY CHALCOPYRITE SEMICONDUCTOR SYSTEM FOR SOLAR PHOTOVOLTAIC CELLS* G. H. CHAPMAN, J. SHEWCHUN, B. K. GARSIDE Department of Engineering Physics, McMaster University, Hamilton, Ontario, Canada LSS 4M1 J. J. LOFERSKI and R. BEAULIEU Division of Engineering, Brown University, Providence, RI, USA Received 9 April 1979 Group III-V mixed alloy quarternary semiconductors, such as Ga~l_r)InyAs(l x)Px, have been extensively employed in lattice matching different semiconductor layers (at specified band- gaps) to form heterojunction electro-optical devices. The feasibility of employing the analogous pentenary alloys, consisting of the ternary chalcopyrites groups 1-III-VI2 and If-IV-V2, are being reported. As a prototype of such alloys, samples of the pentenary Cu, _y)AgflnS2, -x)Sezx have been synthesized and studied. These were prepared by reacting stoichiometric powder mix- tures at about 900°C. X-ray diffractometry tests suggest the compounds maintain complete solid solubility throughout the system in a chalcopyrite type crystal structure. The alloy's intrinsic conductivity type appears to tend towards n-type for silver and sulfer rich compounds, while forming p-type for copper and selenium rich materials. Using cathodoluminescence spectra the sample's bandgap energies were estimated at 300 and 77 K. These indicate that all the alloys syn- thesized were direct bandgap semiconductors. Using least square fits on the data, topological maps of the bandgap and lattice constants versus composition have been produced. 1. Introduction Much interest is currently being expressed in heterojunction type diodes for applications in solar energy conversion and optical communications. Such devices generally require an excellent lattice match between several layers of different com- positions, each of which must have a different bandgap and/or conductivity type. Unfortunately, there is a limited number of monoelement or binary semiconductors which may be lattice matched together. One approach to this problem has been the employment of the bandgap and crystal parameter variations possible in mixed ternary and quaternary alloys of the binary compounds. For example, using III-V semiconductors double heterojunction lasers have been produced employing In~l_ y)GarAs~-~)Px alloys on GaAstl _:)P: substrates [1]. This paper explores the * This work supported by the Department of Energy under contract no. EG-77-C-03-1979 and the National Research Council of Canada. 451

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