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    188宝金博页面版: Preparation and properties of sputtered a-SiHF films

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    内容提示： Solar Energy Materials 9 (1983) 229-2,*5 229 North-Holland PREPARATION AND PROPERTIES OF SPUTTERED a-Si:H:F FILMS W. BEYER, J. CHEVALLIER * and K. REICHELT Institut fiir Grenzfli~chenforschung und Vakuumphysik, lnslitut fftr Festk6rperforschung, Kern- forschungsanlage Jiilich, D - 5170 Jiilich, Fed. Rep. Germany Received 31 March 1983 Amorphous Si : F, Si : H : F and Si : H films have been prepared by reactive sputtering of silicon. We have investigated the composition by Rutherford backscattering and by n...

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    Solar Energy Materials 9 (1983) 229-2,*5 229 North-Holland PREPARATION AND PROPERTIES OF SPUTTERED a-Si:H:F FILMS W. BEYER, J. CHEVALLIER * and K. REICHELT Institut fiir Grenzfli~chenforschung und Vakuumphysik, lnslitut fftr Festk6rperforschung, Kern- forschungsanlage Jiilich, D - 5170 Jiilich, Fed. Rep. Germany Received 31 March 1983 Amorphous Si : F, Si : H : F and Si : H films have been prepared by reactive sputtering of silicon. We have investigated the composition by Rutherford backscattering and by nuclear reaction techniques, the electronic properties by conductivity, thermopower and photoconductivity mea- surements and the thermal stability by gas evolution and annealing experiments. For a-Si : F films the results show an improvement of the electronic properties when the fluorine concentration is increased, for a-Si : F and a-Si : H : F films when the deposition temperature is raised. Both effects are attributed to an increased degree of dangling bond passivation. For a-Si : H : F films deposited at substrate temperatures T~ = 400-500°C a relatively high photoconductivity is obtained which is stable up to annealing temperatures above 600°C. Comparable glow-discharge a-Si : H films show a decay of the electronic properties near 500°C already, and we associate this high thermal stability of sputtered a-Si: H : F films with a decreased hydrogen diffusion coefficient. In spite of the high Si-F binding energy of E > 5 eV considerable amounts of fluorine are released as low as 500°C from Si : F and Si : H : F films. This effect is attributed to a process involving the presence, formation or migration of dangling bonds. 1. Introduction Pure amorphous silicon films are known to contain a high concentration of unsaturated bonds which lead to defect states in the forbidden gap. In order to obtain a material of high electronic quality, e.g. for the application in thin film solar cells, generally hydrogen is added during the film preparation or thereafter for the saturation of these bonds. However, it has been shown that dangling bond saturation can also be achieved by other reactive additives like oxygen [1], water vapour [2] and fluorine [3]. In particular fluorine has attracted some attention since it is monovalent like hydrogen but the Si-F binding energy exceeds that of Si-H by a factor of 1.8 [4]. Therefore, one may expect for a-Si : F a higher thermal stability than for a-Si : H, which is known to release hydrogen already at 300°C [5] and below. Moreover, according to Fisch and Licciardello [6], a-Si:H films may contain Si-H-Si three- center bonds which act as deep hole traps and which could be avoided by substitut- ing fluorine for hydrogen. Indeed, Ovshinsky and Madan [7], using glow-discharge (GD) decomposition of * Present address: Institute of Physics, University of Aarhus, DK-8000 Aarhus C, Denmark. 0 ! 65-1633/83/0000-0000/$03.00 © 1983 North-Holland

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